<rss version="2.0"><channel><title>Nanotechnology</title><link>http://www.oanano.org/oatube/$nanotechnology/</link><description></description><pubDate>2009-05-26T12:59:00Z</pubDate><generator>http://www.webjam.com/</generator><language>en</language><item><title>N.P.Cele</title><link>http://www.oanano.org/oatube/$nanotechnology/2009/05/26/npcele</link><comments>http://www.oanano.org/oatube/$nanotechnology/2009/05/26/npcele#Comments</comments><pubDate>2009-05-26T12:59:00Z</pubDate><category>nanotubes</category><guid isPermaLink="true">http://www.oanano.org/oatube/$nanotechnology/2009/05/26/npcele</guid><description><![CDATA[<h3><b><span style="font-size: 18px;"><span style="font-family: arial;">Effect of multi-walled carbon nanotubes dispersion on the properties of nafion fuel cell membranes </span></span></b></h3>
<p><span style="font-family: arial;">Nonhlanhla P. Cele^1,2, Suprakas Sinha Ray^1 and Muzi Ndwandwe^2 </span><br /><br />^1National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research,1-Meiring Naude Road, Brummeria, PO Box 395, Pretoria 0001, Republic of South Africa.^2Derpartment of Physics and Engineering, University of Zululand, Private bag X 3886, Kwadlangezwa 1001, Republic of South Africa<br />Email: <a href="mailto:ncele@csir.co.za">ncele@csir.co.za</a></p>
<p>Polymer nano-composites (PNCs) have recently shown the worldwide growth efforts in the fabrication of high temperature proton exchange membrane for fuel cells. In principle the nano-composites are an extreme case of composites in which case the interface interaction between two or more phases are maximised to obtain superior performance as compared to any of the bulk solid component. In PNCs, nano-meter-size particles of inorganic or organic materials are homogeneously dispersed as separate particles in a polymer matrix [1,2]. There is a wide variety of nano-particles that are blended with the Nafion membrane to generate new structures of materials to improve its properties for proton exchange membrane fuel cell (PEMFC) applications [3-5]. CNTs are considered as the most promising nano-fillers for the preparation of conducting and thermally stable polymer nano-composites, because of their excellent electrical conductivity, thermal and mechanical stability [6-9]. Nafion based nano-composite membranes were prepared with pure multi-walled carbon nano-tubes (PMWCNTs), oxidised MWCNTs (OMWCNTs) and functionalised MWCNTs (FMWCNTs) as fillers, to investigate the effect of multi-walled carbon nano-tubes on thermal stability and mechanical properties of the Nafion membranes. The results showed much improvement on thermal stability of prepared Nafion nano-composites compared to pure Nafion membrane with an addition of only 1% wt percent MWCNTs.</p>
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<div align="justify"><b>References</b></div>
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<div align="justify">[1] S. Singh and S. Sinha Ray, <a href="http://dx.doi.org/DOI:10.1166/jnn.2007.909">J. Nanosci. &amp; Nanotechnol. <b>7, </b>2596 (2007)</a><br />[2] T. McNallya, P. Potschkeb, P. Halleyc and M. Murphyc, <a href="http://dx.doi.org/DOI:10.1016/j.polymer.2005.06.094">Polymer <b>46</b>, 8222 (2005)</a><br />[3] M. Doyle, G. Rajendran in Handbook of Fuel Cell Fundamentals, (Eds. W. Vielstich, A. Lamm, H. A. Gasteiger) John Wiley &amp; Sons , 3 (Part 3) (2003) 351 ISBN 978-0-471-49926-8<br />[4] C. Yang, P. Costamagna, S. Srinivasan, J. Benziger, A. B. Bocarsly, <a href="http://dx.doi.org/DOI:10.1016/S0378-7753%2801%2900812-6">J. Power Sources <b>103,</b> 1(2001)</a><br />[5] C. C. Li, G. Suna, S. Rena, J. Liu, Q. Wang, Z. Wu, Hai Sun, Wei Jin, <a href="http://dx.doi.org/DOI:10.1016/j.memsci.2005.07.032">J. Membrane Sci. <b>272,</b> 50(2006)</a><br />[6] H. Cui, J. Ye, W. Zhang, J. Wang and F. Sheu, <a href="http://dx.doi.org/DOI:10.1016/j.jelechem.2004.12.004">Journal of Electroanalytical Chemistry, <b>577, </b>295 (2005)</a><br />[7] S. Banerjee, D. E. Curtin, <a href="http://dx.doi.org/DOI:10.1016/j.jfluchem.2004.05.018">J. Fluorine Chem. <b>125</b>, 1211 (2004)</a><br />[8] J-M Thomassin, J. Kollar, G. Caldarella, A. Germain, R. Jerome, C. Detrembleur, <a href="http://dx.doi.org/DOI:10.1016/j.memsci.2007.07.019">Journal of Mebrane Science <b>303</b>, 252 (2007)</a></div>
<div align="justify">[9] I. Alexandrou, E. Lioudakis, D. Delaportas, C. Z. Zhao, and A. Othonos, <a href="http://www.oatube.org/2009/01/ialexandrou.html">OAtube Nanotechnology <b>2</b>, 108 (2009)</a>.<b> </b><br /><br /></div>
<div align="justify"><b>Citation:</b></div>
<div align="justify">N. P. Cele, S. S. Ray and M. Ndwandwe, OAtube Nanotechnology <b>2</b>, 510 (2009). <a target="_blank" href="http://www.oanano.org/oatube/$nanotechnology/2009/05/26/npcele">http://www.oanano.org/oatube/$nanotechnology/2009/05/26/npcele</a></div>]]></description></item><item><title>B.W.Mwakikunga</title><link>http://www.oanano.org/oatube/$nanotechnology/2009/01/27/bwmwakikunga</link><comments>http://www.oanano.org/oatube/$nanotechnology/2009/01/27/bwmwakikunga#Comments</comments><pubDate>2009-01-27T13:34:00Z</pubDate><category>nanocharacterization</category><guid isPermaLink="true">http://www.oanano.org/oatube/$nanotechnology/2009/01/27/bwmwakikunga</guid><description><![CDATA[<h3 align="justify"><b><span style="font-size: 18px;"><span style="font-family: arial;">Can universal conductance fluctuations (UCFs) be observed at temperatures above room temperature at nanoscale?</span></span></b></h3>
<div align="justify">B. W. Mwakikunga^1,2,3, E. Sideras-Haddad^1,4, C. Arendse^2 and A. Forbes^5</div>
<div align="justify">^1School of Physics , University of the Witwatersrand, PO Box Wits, Johannesburg , 2050 South Africa</div>
<div align="justify">^2 CSIR National Centre for Nano-Structured Materials, PO Box 395, Pretoria</div>
<div align="justify">^3 Department of Physics and Biochemical Sciences, University of Malawi, The Polytechnic, P. B. 303, Chichiri, Blantyre 0003, Malawi</div>
<div align="justify">^4iThemba Labs Gauteng, Johannesburg, South Africa</div>
<div align="justify">^5CSIR National Laser Centre, PO Box 395, Pretoria, South Africa</div>
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<p>We report conductance fluctuation in VO2 nano-ribbons of 10 nm thickness at moderate temperatures. Synthesis of these nano-ribbons was reported elsewhere [1-4]. The fluctuations are periodic at room temperature up to the VO2 transition temperature of 70 oC. These are surprising results since dc currents are producing a.c. potential difference values in i-v characteristics of the nano-ribbons of VO2 contrary to those of normal bulk materials. Three main theories were considered in order to explain these findings (1) The LRC equivalent circuit theory (2) the Gunn effect [5] and (3) the Universal Conductance Fluctuations theories [6-15]. The first two theories failed to explain our experimental data. We have explained this anomalous behaviour by the third theory which is a manifestation of the wave nature of electrons. The wave nature of electrons has been demonstrated in many instances including the Nobel&ndash;prize&ndash;winning Davisson &amp; Germer experiment on electron diffraction. In electronic circuits, quantum interference in metallic wires [6-8], the so-called &lsquo;weak localization&rsquo; [9,10] and universal conductance fluctuations (UCF) [11-13] are all manifestations of this wave nature. Fluctuations originate from coherence effects for electronic wave&ndash;functions and thus the phase&ndash;coherence length, lf needs to be smaller than the momentum relaxation length lm. UCF is more profound when electrical transport is in the weak localization regime lf &lt; lc ="M" g0="2e2/h"&gt;</p>
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<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;"><a href="http://www.authorstream.com/Presentation/bonexmwakikunga-127544-ucfs-seen-nanoscale-universal-conductance-fluctuations-vo2-room-temperature-bonex-oatubedec2008-science-technology-ppt-powerpoint/">Video Content </a>Length 15:08 Copyright &copy;2009 Mwakikunga et al    <b>&nbsp;</b></span></span></div>
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<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">1. B. W. Mwakikunga, A. Forbes, E. Sideras-Haddad, R M Erasmus, G. Katumba, B. Masina, Synthesis of tungsten oxide nanostructures by laser pyrolysis, </span><a href="http://dx.doi.org/doi:10.1504/IJNP.2008.020895"><span style="font-family:arial;">Int. J. Nanoparticles <b>1</b>, 3 (2008)</span></a><span style="font-family:arial;">. </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">2. B. W. Mwakikunga, A. Forbes, E. Sideras-Haddad, C. Arendse, Raman spectroscopy of WO3 nanowires and thermochromism study of VO2 belts produced by ultrasonic spray and laser pyrolysis techniques, </span><a href="http://dx.doi.org/doi:10.1002/pssa.200776829"><span style="font-family:arial;">Phys. Stat. Solidi (a) <b>205</b>, 150 (2008)</span></a><span style="font-family:arial;">. </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">3. B. W. Mwakikunga, E. Sideras-Haddad, M. Witcomb, C. Arendse, A. Forbes, WO3 nano-spheres into W18O49 one-dimensional nano &ndash; structures through thermal annealing, </span><a href="http://dx.doi.org/doi:%2010.1166/jnn.2008.VC12"><span style="font-family:arial;">J. Nanosci. &amp; Nanotechnol <b>8</b>, 1 (2008)</span></a><span style="font-family:arial;">. </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">4. B. W. Mwakikunga, A. Forbes, E. Sideras-Haddad, C. Arendse, Optimization,yield studies and morphology of WO3 nanowires synthesized by laser pyrolysis in C2H2 and O2 ambients &ndash; validation of a new growth mechanism, </span><a href="http://dx.doi.org/doi:%2010.1007/s11671-008-9169-6"><span style="font-family:arial;">Nanoscale Res. Lett. <b>3</b>, 372 (2008)</span></a><span style="font-family:arial;">. </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">5. J.B. Gunn, Microwave oscillations of current in III&ndash;V semiconductors, </span><a href="http://www.oanano.org/js/tinymce/doi:10.1016/0038-1098%2863%2990041-3"><span style="font-family:arial;">Solid State Commun.<b>1</b>, 88 (1963)</span></a><span style="font-family:arial;">. </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">6. M. Okuda, S. Miyaza, Quantum Interference of Electrons in a Field-Controlled Double-Quantum-Wire Interferemeter, </span><a href="http://link.aps.org/doi/10.1103/PhysRevB.47.4103"><span style="font-family:arial;">Phys. Rev. B <b>47</b>, 4103 (1993)</span></a><span style="font-family:arial;">. </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">7. Y. Koyama, Y. Takane, Quantum Interference Effect on the Conductance of a Ferromagnetic Wire with a Domain Wall, </span><a href="http://dx.doi.org/doi:%2010.1143/JPSJ.72.634"><span style="font-family:arial;">J. Phys. Soc. Jpn. <b>72</b>, 634 (2003)</span></a><span style="font-family:arial;">. </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">8. W. Liang, M. Bockrath, D. Bozovic, J. H. Hafner, M. Tinkham, H. Park, Fabry-Perot Interference in a Nanotube Electron Waveguide, </span><a href="http://dx.doi.org/doi:10.1038/35079517"><span style="font-family:arial;">Nature <b>411</b>, 665 (2001)</span></a><span style="font-family:arial;">. </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">9. D. E. Khmelnitskii, Localization and Coherent Scattering of Electrons, </span><a href="http://dx.doi.org/doi:%2010.1103/PhysRevLett.55.2696"><span style="font-family:arial;">Physica B<b>126</b>, 235 (1984)</span></a><span style="font-family:arial;">. </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">10 D. Y. Sharvin, Y. V. Sharvin, Magnetic Flux Quantization in a Cylindrical Film of a Normal Metal, </span><a href="http://www.jetpletters.ac.ru/ps/1518/article_23205.pdf"><span style="font-family:arial;">JETP Lett. <b>34</b>, 272 (1981)</span></a><span style="font-family:arial;">. </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">11. Stone, A. D., Lee, P. A.: Universal Conductance Fluctuations in Metals, </span><a href="http://dx.doi.org/doi:%2010.1103/PhysRevLett.55.1622"><span style="font-family:arial;">Phys. Rev. Lett. <b>55</b>, 1622 (1985)</span></a><span style="font-family:arial;">. </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">12. Datta, S.: Electronic Transport in Mesoscopic Systems, Cambridge University Press, (1995) ISBN 0521599431, 9780521599436 </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">13. J. P. Holder, A. K. Savchenko, V. I. Fal&rsquo;ko, B. Jouault, G. Faini, F. Laruelle, E. Bedel, Enhanced Fluctuations of the Tunnel Density of States near Bottoms of Landau Bands Measured by a Local Spectrometer, </span><a href="http://dx.doi.org/doi:%2010.1103/PhysRevLett.84.1563"><span style="font-family:arial;">Phys. Rev. Lett. <b>84</b>, 1563 (1999)</span></a><span style="font-family:arial;">. </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">14. A. B. Fowler, A. Harstein, R. A. Webb, Conductance in restricted dimensionality accumulation layers&rdquo;</span><a href="http://dx.doi.org/doi:%2010.1103/PhysRevLett.48.196"><span style="font-family:arial;"> Phys. Rev. Lett. <b>48</b>, 196 (1982)</span></a><span style="font-family:arial;">. Washburn, S.: Fluctuations in the Extrinsic Conductivity of Disordered Metal, IBM J. Res. Develop. <b>32</b>, 335 (1988). </span></span></div>
<div align="justify"><span style="font-family:arial;"><span style="font-family:arial;">15.van Oudenaarden, A., Devoret, M. H., ISSN:0018-8646 Visscher, E. H., Nazarov, Y. V., Mooij, J. E.: Conductance Fluctuations in a Metallic Wire Interrupted by a Tunnel Junction, </span><a href="http://dx.doi.org/doi:%2010.1103/PhysRevLett.78.3539"><span style="font-family:arial;">Phys. Rev. Lett. <b>78</b>, 3539 (1997)</span></a><span style="font-family:arial;">.</span></span></div>
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<div align="left"><b>Citation: </b></div>
<div align="left"><b>&nbsp;</b> B. W. Mwakikunga, E. Sideras-Haddad, C. Arendse and A. Forbes, OAtube Nanotechnology <b>2</b>, 109 (2009). <a href="http://www.oanano.org/oatube/$nanotechnology/2009/01/27/bwmwakikunga">http://www.oanano.org/oatube/$nanotechnology/2009/01/27/bwmwakikunga</a></div>]]></description></item><item><title>I.Alexandrou</title><link>http://www.oanano.org/oatube/$nanotechnology/2009/01/11/ialexandrou</link><comments>http://www.oanano.org/oatube/$nanotechnology/2009/01/11/ialexandrou#Comments</comments><pubDate>2009-01-11T08:26:00Z</pubDate><category>nanocharacterization</category><guid isPermaLink="true">http://www.oanano.org/oatube/$nanotechnology/2009/01/11/ialexandrou</guid><description><![CDATA[<h3 align="justify"><b><span style="font-size: 18px;"><span style="font-family: arial;">Opto-electronic properties of P3HT-nanotube composites </span></span></b></h3>
<div align="justify"><span style="font-family:arial;"> I. Alexandrou^1, E. Lioudakis^2,3, D. Delaportas^1, C. Z. Zhao^1 and A. Othonos^2  <span style="font-size:85%;">&nbsp;</span></span></div>
<div align="justify">^1Electrical Engineering &amp; Electronics, University of Liverpool, Liverpool L69 3GJ, UK</div>
<div align="justify">^2Research Center of Ultrafast Science, Department of Physics, University of Cyprus, P.O. Box 20537, 1678, Nicosia, Cyprus</div>
<div align="justify">^3Energy, Environment and Water Research Center, Cyprus Institute, PO Box 22745, CY-1523, Nicosia, Cyprus</div>
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<p>Polymer materials are expected to play a major role in the development of low cost opto-electronic devices. A major advantage of polymers is that they can be mixed <span style="font-family:arial;">with other polymers or nanomaterials in solution to form composites with large area internal junctions. By tuning charge exchange and storage in these junctions one can optimise the opto-electronic properties of these composites. One class of polymer-based composites that holds much promise is polymer-nanotube composites. [1&ndash;11] However, probing these properties in detail is not trivial. On the one hand, electronic characterisation that relies on the semiconducting response of the composites cannot be used for composites with nanotube concentration above the percolation limit because the composite&rsquo;s response becomes metallic. On the other hand, at low nanotube concentrations the optical response of the composites is dominated by that of the polymer making optical characterisation ideal for high nanotube concentrations. [12] In this presentation we show how a combination of electrical and optical characterisations can be used to probe the response of charge at the polymer-nanotube bulk junctions. The samples examined were prepared by mixing P3HT and single wall nanotubes (SWNTs) from dichlorobenzene solutions. Processing and measurements were performed in ambient conditions while the samples were kept at dark between measurements. Current-voltage measurements on composites reveal good dispersion of nanotubes with a percolation threshold of about 0.75%wt. Using capacitance-voltage (C-V) measurements we show that charge trapped or released from the SWNTs can be probed. By varying the measurement frequency we can also assess the time response of the polymer-nanotube junctions. The optical response of the composites was studied using spectroscopic Ellipsometry and transient photoinduced absorption measurements. With the addition of SWNTs excitonic energy levels within the polymer density of states appear to quench progressively 1 faster and always in the sub 5ps timescale. The absorption spectra also show that the addition of nanotubes influences the packing of polymer chains. By probing the response of the composites at high SWNT concentrations using optical methods and at low concentrations using C-V, our method provides a unified approach for studies of composites.</span></p>
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</span> <span style="font-family:arial;"><a href="http://www.authorstream.com/Presentation/ialexandrou-100685-optoelectronic-properties-composites-Opto-electronic-P3HT-nanotube-WHY-Pure-SWNTs-Polymer-SWNT-wraps-CNT-Science-Technology-ppt-powerpoint/"><br />Video Content </a>Length 10:39 Copyright &copy;2009 Alexandrou et al</span><span style="font-family:arial;">&nbsp;</span></div>
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<div align="justify"><span style="font-family:arial;">[10] C. D. Canestraro, M. C. Schnitzler, A. J. G. Zarbin, M. G. E. da Luz, and L. S. Roman, </span><a href="http://dx.doi.org/doi:10.1016/j.apsusc.2005.12.139"><span style="font-family:arial;">Appl. Surf. Sci. <b>252</b>, 5575 (2006).</span></a> <span style="font-family:arial;">&nbsp;</span></div>
<div align="justify"><span style="font-family:arial;">[11] A. Star, Y. Lu, K. Bradley, and G. Gr&uml;uner,</span><a href="http://dx.doi.org/10.1021/nl049337f"><span style="font-family:arial;"> Nano Lett. <b>4,</b> 1587 (2004)</span></a><span style="font-family:arial;">. </span></div>
<div align="justify"><span style="font-family:arial;">[12] E. Lioudakis, A. Othonos, and I. Alexandrou, </span><a href="http://dx.doi.org/10.1007/s11671-008-9149-x"><span style="font-family:arial;">Nanoscale Res. Lett. <b>3</b>, 278 (2008).</span></a></div>
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<p><b>Citation:</b></p>
<div align="left">I. Alexandrou, E. Lioudakis, D. Delaportas, C. Z. Zhao, and A. Othonos, OAtube Nanotechnology <b>2</b>, 108 (2009). <a href="http://www.oanano.org/oatube/$nanotechnology/2009/01/11/ialexandrou">http://www.oanano.org/oatube/$nanotechnology/2009/01/11/ialexandrou</a></div>]]></description></item><item><title>J.H.Chen</title><link>http://www.oanano.org/oatube/$nanotechnology/2008/10/21/jhchen</link><comments>http://www.oanano.org/oatube/$nanotechnology/2008/10/21/jhchen#Comments</comments><pubDate>2008-10-21T07:20:00Z</pubDate><category>nanotubes</category><guid isPermaLink="true">http://www.oanano.org/oatube/$nanotechnology/2008/10/21/jhchen</guid><description><![CDATA[<div style="margin: 1ex;">
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<p style="text-align: left;"><span style=";font-family:Times New Roman;font-size:100%;"><b>Multifunctional  Hybrid Nanocrystal-Carbon Nanotube Structures</b></span></p>
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<p style="text-align: left;"><span style=";font-family:Times New Roman;font-size:100%;">Junhong Chen*</span></p>
<p style="text-align: left;"><span style="font-style: italic;font-family:Times New Roman;font-size:100%;">Department of  Mechanical Engineering, University of  Wisconsin-Milwaukee, </span><span style="font-style: italic;">Milwaukee, WI 53211</span><span style="font-style: italic;font-family:Times New Roman;font-size:100%;"> * jhchen@uwm.edu</span></p>
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<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">Hybrid nanomaterials  composed of nanocrystals distributing on the surfaces of carbon nanotubes  (CNTs) represent a new class of materials.  These materials could potentially  display not only the unique properties of nanocrystals and those of  CNTs, but also additional novel properties due to the interaction (e.g.,  electronic or optical) between the nanocrystal and the CNT.  Such hybrid  nanocrystal-CNT structures are promising for various innovative nanotechnological  applications, including chemical sensors [1], biosensors [2], nanoelectronics  [3], photovoltaic cells [4], fuel cells [5], and hydrogen storage [6].   In this talk, I will present a material-independent, dry route based  on the electrostatic force directed assembly (ESFDA) to assemble aerosol  nanocrystals onto CNTs [7-11].  The method takes advantage of the small  diameter of CNTs for a significantly enhanced electric field near the  CNT surface, which is then used to attract charged aerosol nanocrystals  [12] onto oppositely-biased CNTs.  The ESFDA technique works for both  random CNTs and aligned CNTs without the need for chemical functionalization  or other pretreatments of CNTs.  There is an intrinsic nanocrystal size  selection during the assembly process, which results in a narrower size  distribution for nanocrystals on CNTs than that for as-produced nanocrystals.   Moreover, the areal density and the actual size distribution of nanocrystals  on the CNT can be controlled.  The non-covalent attachment of nanocrystals  also preserves the intrinsic properties of CNTs [13].  The new  method enables in-situ coating of nanotubes with nanocrystals.  Due  to the inherent material-independence nature of the electrostatic force,  various compositions of such nanocrystal-CNT hybrid structures can be  produced using this new technique. </span></p>
<p align="justify"><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span"><span class="Apple-style-span" style="font-weight: bold;"><span class="Apple-style-span" style="font-size:medium;">
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<span style="font-size:85%;">&nbsp;</span><span class="Apple-style-span" style="font-family:'times new roman';"><a href="http://www.authorstream.com/Presentation/oatube-97511-nanotechnology-1-1007-2008-nanotubes-94584-633594115901250000-science-technology-ppt-powerpoint/"><span class="Apple-style-span" style="font-weight: normal;"><br />Video Content</span></a> Length</span></span></span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"> 36:54 </span></span><span class="Apple-style-span" style="font-weight: bold;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">Copyright</span></span></span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">: &copy; 2008 Chen et al</span></span></span></span></span></span></p>
<p align="justify"><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span style="font-weight: bold;">References</span> </span></span></span></span></span></span></p>
<ul>
<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">1. Kong,  J., M.G. Chapline, and H.J. Dai, <i>Functionalized carbon nanotubes  for molecular hydrogen sensors.</i> </span><a href="http://www3.interscience.wiley.com/journal/85510813/abstract" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">Advanced  Materials, 2001. </span><b><span style="text-decoration: underline;">13</span></b><span style="text-decoration: underline;">(18): p. 1384-1386.</span></span></a></p>
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<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">2. Chen,  R.J., S. Bangsaruntip, K.A. Drouvalakis, N.W.S. Kam, M. Shim, Y.M. Li,  W. Kim, P.J. Utz, and H.J. Dai, <i>Noncovalent functionalization of  carbon nanotubes for highly specific electronic biosensors.</i> </span><a href="http://www.pnas.org/content/100/9/4984.abstract" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">Proceedings of the  National Academy of Sciences of the United States of America, 2003. </span> <b><span style="text-decoration: underline;">100</span></b><span style="text-decoration: underline;">(9): p. 4984-4989</span></span></a><span style=";font-family:Times New Roman;font-size:100%;">.</span></p>
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<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">3. Hu, J.T.,  O.Y. Min, P.D. Yang, and C.M. Lieber, <i>Controlled growth and electrical  properties of heterojunctions of carbon nanotubes and silicon nanowires.</i> </span><a href="http://www.nature.com/nature/journal/v399/n6731/abs/399048a0.html" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">Nature, 1999. </span> <b><span style="text-decoration: underline;">399</span></b><span style="text-decoration: underline;">(6731): p. 48-51</span></span></a><span style=";font-family:Times New Roman;font-size:100%;">.</span></p>
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<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">4. Robel,  I., B.A. Bunker, and P.V. Kamat, <i>Single-walled carbon nanotube-CdS  nanocomposites as light-harvesting assemblies: Photoinduced charge-transfer  interactions.</i> </span><a href="http://www3.interscience.wiley.com/journal/111090082/abstract" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">Advanced  Materials, 2005. </span><b><span style="text-decoration: underline;">17</span></b><span style="text-decoration: underline;">(20): p. 2458-63</span></span></a><span style=";font-family:Times New Roman;font-size:100%;">.</span></p>
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<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">5. Robel,  I., G. Girishkumar, B.A. Bunker, P.V. Kamat, and K. Vinodgopal, <i>Structural  changes and catalytic activity of platinum nanoparticles supported on  C-60 and carbon nanotube films during the operation of direct methanol  fuel cells.</i> </span><a href="http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&amp;id=APPLAB000088000007073113000001&amp;idtype=cvips&amp;gifs=Yes" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">Applied  Physics Letters, 2006. </span><b><span style="text-decoration: underline;">88</span></b><span style="text-decoration: underline;">(7): p. 073113</span></span></a><span style=";font-family:Times New Roman;font-size:100%;">.</span></p>
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<ul>
<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">6. Yildirim,  T. and S. Ciraci, <i>Titanium-decorated carbon nanotubes as a potential  high-capacity hydrogen storage medium.</i> </span><a href="http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&amp;id=PRLTAO000094000017175501000001&amp;idtype=cvips&amp;gifs=Yes" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">Physical  Review Letters, 2005. </span><b><span style="text-decoration: underline;">94</span></b><span style="text-decoration: underline;">(17): p. 175501</span></span></a><span style=";font-family:Times New Roman;font-size:100%;">.</span></p>
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<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">7. Chen,  J.H. and G.H. Lu, <i>Controlled Decoration of Carbon Nanotubes with  Nanoparticles.</i> </span><a href="http://www.iop.org/EJ/abstract/-search=58662440.3/0957-4484/17/12/011" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">Nanotechnology,  2006. </span><b><span style="text-decoration: underline;">17</span></b><span style="text-decoration: underline;">(12): p. 2891-2894</span></span></a><span style=";font-family:Times New Roman;font-size:100%;">.</span></p>
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<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">8. Lu, G.H.,  L.Y. Zhu, P.X. Wang, J.H. Chen, D.A. Dikin, R.S. Ruoff, Y. Yu, and Z.F.  Ren, <i>Electrostatic-Force-Directed Assembly of Ag Nanocrystals onto  Vertically Aligned Carbon Nanotubes.</i> </span><a href="http://pubs.acs.org/cgi-bin/abstract.cgi/jpccck/2007/111/i48/abs/jp071523x.html" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">J.  Phys. Chem. C, 2007. </span><b><span style="text-decoration: underline;">111</span></b><span style="text-decoration: underline;">(48): p. 17919-17922</span></span></a><span style=";font-family:Times New Roman;font-size:100%;">.</span></p>
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<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">9. Zhu,  L.Y., G.H. Lu, and J.H. Chen, <i>A Generic Approach to Coat Carbon Nanotubes  with Nanoparticles for Potential Energy Applications.</i> </span><a href="http://asmedl.aip.org/getabs/servlet/GetabsServlet?prog=normal&amp;id=JHTRAO000130000004044502000001&amp;idtype=cvips&amp;gifs=Yes" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">Journal of Heat  Transfer, 2008. </span><b><span style="text-decoration: underline;">130</span></b><span style="text-decoration: underline;">(4): p. 044502</span></span></a><span style=";font-family:Times New Roman;font-size:100%;">.</span></p>
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<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">10. Liu,  M., G.H. Lu, and J.H. Chen, <i>Synthesis, Assembly, and Characterization  of Si Nanoparticles and Si Nanoparticle-Carbon Nanotube Hybrid Structures.</i> </span><a href="http://www.iop.org/EJ/abstract/-search=58662440.2/0957-4484/19/26/265705" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">Nanotechnology,  2008. </span><b><span style="text-decoration: underline;">19</span></b><span style="text-decoration: underline;">(26): p. 265705</span></span></a><span style=";font-family:Times New Roman;font-size:100%;">.</span></p>
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<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">11. Lu,  G.H., M. Liu, K.H. Yu, and J.H. Chen, <i>Absorption Properties of Hybrid  SnO2 Nanocrystal-Carbon Nanotube Structures.</i> </span><a href="http://springerlink.com/content/8823773324k868j3" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">Journal of Electronic  Materials, </span><b><span style="text-decoration: underline;">37</span></b><span style="text-decoration: underline;">(11), 1686-1690, 2008</span></span></a><span style=";font-family:Times New Roman;font-size:100%;">.</span></p>
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<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">12. Chen,  J.H., G.H. Lu, L.Y. Zhu, and R.C. Flagan, <i>A Simple and Versatile  Mini-Arc Plasma Source for Nanocrystal Synthesis.</i> </span><a href="http://springerlink.com/content/e0p43u6613034046" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">Journal of Nanoparticle  Research, 2007. </span><b><span style="text-decoration: underline;">9</span></b><span style="text-decoration: underline;">(2): p. 203-213</span></span></a><span style=";font-family:Times New Roman;font-size:100%;">.</span></p>
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<p align="justify"><span style=";font-family:Times New Roman;font-size:100%;">13. Zhu,  L.Y., G.H. Lu, S. Mao, J.H. Chen, D.A. Dikin, X.Q. Chen, and R.S. Ruoff, <i> Ripening of Silver Nanoparticles on Carbon Nanotubes.</i> </span><a href="http://db0.worldscinet.com/worldsci-staging/tocdetail.nsp" target="_blank"><span style="color: #0000ff;font-family:Times New Roman;font-size:100%;"><span style="text-decoration: underline;">NANO, 2007. </span> <b><span style="text-decoration: underline;">2</span></b><span style="text-decoration: underline;">(3): p. 149-156</span></span></a><span style=";font-family:Times New Roman;font-size:100%;">.</span></p>
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<div><span class="Apple-style-span" style="font-weight: bold;font-family:'times new roman';">Citation:</span></div>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">J.H.Chen, OAtube Nanotechnology 1, 1007 (2008). <a href="http://www.oanano.org/oatube/$nanotechnology/2008/10/21/jhchen"><span class="Apple-style-span" style="font-size:medium;">http://www.oanano.org/oatube/$nanotechnology/2008/10/21/jhchen</span></a></span></span></div>
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</div>]]></description></item><item><title>R.Vajtai</title><link>http://www.oanano.org/oatube/$nanotechnology/2008/10/02/rvajtai</link><comments>http://www.oanano.org/oatube/$nanotechnology/2008/10/02/rvajtai#Comments</comments><pubDate>2008-10-02T07:14:00Z</pubDate><category>nanotubes</category><guid isPermaLink="true">http://www.oanano.org/oatube/$nanotechnology/2008/10/02/rvajtai</guid><description><![CDATA[<h3><span style="font-size: 18px;"><b>Carbon nanotubes: optimized growth for applications and practical use of large CNT structures</b></span><span style="font-size:100%;"><span style="font-family:times new roman;"> </span></span></h3>
<p><span style="font-size:100%;"><span style="font-family:times new roman;">&nbsp;</span><span style="font-family:times new roman;">Robert Vajtai^1*, G&eacute;za T&oacute;th^2, Kriszti&aacute;n Kord&aacute;s^2, Xiaohong An^3, Pulickel M. Ajayan^1 </span><span style="font-style: italic;font-family:times new roman;"><br />^1 Department of Mechanical Engineering &amp; Materials Science, Rice University, Houston, TX 77005 USA</span> <br /><span style="font-style: italic;font-family:times new roman;">^2 Microelectronics and Materials Physics Laboratories, Department of Electrical and Information Engineering, and EMPART research group of Infotech Oulu, P.O. Box 4500, FIN-90014 University of Oulu, Finland <br /> </span> <span style="font-style: italic;font-family:times new roman;">^3 Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY <br />*Robert.Vajtai@rice.edu </span> <span style="font-family:times new roman;"></span></span></p>
<p><span style="font-size:100%;"><span style="font-family:times new roman;">Carbon nanotubes attracted large-scale scientific interest and their properties are well-studied for the cases when theoretical model work, and at the same time growth routes and proof of the concept applications were demonstrated (see e.g. Ref. 1). </span><span style="font-family:times new roman;">In this talk I briefly summarize our latest result on the most important parameters of multiwalled carbon nanotube growth via the floating catalyst Ferrocene-Xylene route applied earlier with success to create large CNT structures [2]. We investigated the kinetics [3] of the process both experimentally and theoretically and optimized the parameters for carbon nanotube length and also for their quality. These studies were used to reach macroscopic carbon nanotube structures with unique properties optimized to use them as synergistic units. In the main part of the talk I focus on characterization of the structures and their recent applications. Aligned carbon nanotube forests grown with different methods showed wide range of density depending on growth parameters; the physical properties of these films, e.g. compressibility, optical absorbance, thermal and electrical conductivity are unparalleled. To demonstrate the usefulness of these properties I will cite laboratory level applications. First a chip cooler setup [4], made of aligned multiwalled carbon nanotube forest will be presented, where the cooling performance of the device is comparable to a copper cooler having similar geometry; however, the carbon nanotube cooler is much lighter, mechanically stronger and it has more potential for further optimization. Another family of application is printing carbon nanotubes from different kind of &ldquo;inks&rdquo; [5-6]. The most interesting feature of this use is the fact that different coverage of the carbon nanotube film results in either low resistance Ohmic (for high coverage) or a nonlinear (for low coverage) behavior which latter one can be driven by gate voltage [6]. Via controlled amount of materials printed on the multi-micrometer scale the method can prepare complete electronic circuits with active elements and wires made of the same carbon nanotube ink without requiring any expensive pre-selection of semi-conductive and metallic tubes. These applications, together with several other, shortly mentioned ones, outdraw the possibilities that large scale, organized carbon nanotube structures inherently infer.</span></span></p>
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<p><span style="font-size:100%;"><span style="font-family:times new roman;"> </span>
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<span style=";font-family:times new roman;font-size:100%;"><a href="http://www.authorstream.com/Presentation/oatube-87365-nanotechnology-1-1006-2008-nanotube-85189-633558052351875000-science-technology-ppt-powerpoint/"><br />Video Content</a> <span style="font-weight: bold;">Length </span>30:09<span style="font-weight: bold;"> Copyright</span> &copy; 2008 </span></span><span style="font-size:100%;"><span style="font-family:times new roman;">Vajtai</span></span><span style="font-size:100%;"><span style=";font-family:times new roman;font-size:100%;"> et al</span> </span></p>
<p><span style="font-size:100%;"> <span style="font-weight: bold;">References</span> </span></p>
<p><span style="font-size:100%;"> <span style="font-family:times new roman;">[1]    P.M. Ajayan, <a href="http://dx.doi.org/10.1021%2Fcr970102g">Chemical Reviews 99, 1787 (1999)</a>.</span> <span style="font-family:times new roman;"><br />[2] B.Q. Wei, R. Vajtai, Y. Jung, J. Ward, R. Zhang, G. Ramanath and P.M. Ajayan, <a href="http://dx.doi.org/10.1038/416495a">Nature 416, 495 (2002)</a>.</span> <br /><span style="font-family:times new roman;">[3]    N. Halonen, K. Kord&aacute;s, G. T&oacute;th, T. Mustonen, J. M&auml;klin, J. V&auml;h&auml;kangas, P. M. Ajayan and R. Vajtai, <a href="http://dx.doi.org/10.1021%2Fjp7110617">J. Phys. Chem. C 112, 6723 (2008)</a>.</span> <span style="font-family:times new roman;"><br />[4]    K. Kord&aacute;s, G. T&oacute;th, P. Moilanen, M. Kumpum&auml;ki, J. V&auml;h&auml;kangas, A. Uusim&auml;ki, R. Vajtai, and P. M. Ajayan, <a href="http://dx.doi.org/10.1063/1.2714281">Appl. Phys. Lett. 90, 123105 (2007)</a>.</span> <span style="font-family:times new roman;"><br />[5] K. Kord&aacute;s, T. Mustonen, G. T&oacute;th, H. Jantunen, M. Lajunen, C. Soldano, S. Talapatra, S. Kar, R. Vajtai and P. M. Ajayan, <a href="http://dx.doi.org/10.1002/smll.200600061">Small 2, 1021 (2006)</a>.</span> <span style="font-family:times new roman;"><br />[6] T. Mustonen, J. M&auml;klin, K. Kord&aacute;s, N. Halonen, G. T&oacute;th, J. V&auml;h&auml;kangas, H. Jantunen, S. Kar, P. M. Ajayan, R. Vajtai, P. Helist&ouml; and H. Sepp&auml;, <a href="http://dx.doi.org/10.1103/PhysRevB.77.125430">Phys. Rev. B 77, 125430 (2008)</a>.  <span style="font-weight: bold;"></span></span></span></p>
<p><span style="font-size:100%;"><span style="font-family:times new roman;"><span style="font-weight: bold;">Citation:</span> </span></span><span style="font-size:100%;"><span style="font-family:times new roman;"></span></span></p>
<p><span style="font-size:100%;"><span style="font-family:times new roman;">R. Vajtai, G. Toth, K. Kordas, X.H. An, and P. M. Ajayan, OAtube Nanotechnology 1, 1006 (2008). <a href="http://www.oanano.org/oatube/$nanotechnology/2008/10/02/rvajtai">http://www.oanano.org/oatube/$nanotechnology/2008/10/02/rvajtai</a> </span></span></p>]]></description></item><item><title>U.W.Pohl</title><link>http://www.oanano.org/oatube/$nanotechnology/2008/09/06/uwpohl</link><comments>http://www.oanano.org/oatube/$nanotechnology/2008/09/06/uwpohl#Comments</comments><pubDate>2008-09-06T23:04:00Z</pubDate><category>quantum-nanostructures</category><guid isPermaLink="true">http://www.oanano.org/oatube/$nanotechnology/2008/09/06/uwpohl</guid><description><![CDATA[<div><span class="Apple-style-span" style="font-size:large;"><span class="Apple-style-span" style="font-family:'times new roman';">InGaAs/GaAs Quantum Dots for 1.3 &micro;m Applications</span></span></div>
<div><span class="Apple-style-span" style="font-size:large;"><span class="Apple-style-span" style="font-family:'times new roman';"><br /></span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';">U. W. Pohl*, A. Schliwa. I. Kaiander, T. Germann, A. Strittmatter, and D. Bimberg</span></div>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-style: italic;">Institut f&uuml;r Festk&ouml;rperphysik EW5-1, Technische Universit&auml;t Berlin, Hardenbergstr. 36, 10623 Berlin, Germany</span></span></span></div>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-style: italic;">* Email: pohl@physik.tu-berlin.de</span></span></span></div>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-style: italic;"><br /></span></span></span></div>
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<div><span class="Apple-style-span" style="font-family:'times new roman';">Zero-dimensional charge carrier localization in the active region of a semiconductor laser was predicted two decades ago to lead to improved device performance. Self-organized growth of quantum dots (QDs) has since then evolved into the decisive method for defect-free QD fabrication to realize such localization, and the first QD injection laser demonstrated the basic validity of previous predictions [1]. Much effort was subsequently spend to extend the emission wavelength of In(Ga)As QDs in GaAs matrix to the datacom range at 1.3 &micro;m. The basic approach aims at decreasing the energy of the dot&rsquo;s electronic ground state by lowering the hydrostatic strain exerted on the dot by the matrix. Model calculations proved that strain release induced by a thin InGaAs layer with a lower In content on top of the QDs significantly decreases the ground state energy [2]. Combination of such strain-reducing layer (SRL) with a similar, additional layer underneath the dots leads to the dot-in-a-well (DWELL) approach which was successfully applied using molecular beam epitaxy to fabricate GaAs-based QD devices emitting at 1.3 &micro;m. QD devices reaching this target have been fabricated only very recently using metalorganic vapor phase epitaxy (MOVPE) with its scaling ability for mass production. In the presentation concepts for growing InGaAs dots for 1.3 &micro;m emission are discussed and encouraging latest results are presented. We used tertiarybutylarsine as a favorable arsenic precursor [3] and an individual adjustment of growth parameters within the stack of active QDs in a laser [4]. PL is used as a monitor to identify critical growth parameters. Data indicate a crucial role of the V/III ratio applied during growth [5]. InGaAs/GaAs QDs with a strain-reducing layer grown using a low V/III ratio show a robust thermal stability. The good performance is promising to open a way for 1.3 &micro;m device fabrication using metalorganic vapor phase epitaxy.</span></div>
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<p><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span"><span class="Apple-style-span" style="font-weight: bold;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-weight: normal;"><a href="http://www.authorstream.com/Presentation/oatube-86096-oanano-science-technology-ppt-powerpoint/">Video Content</a></span> Length</span></span></span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"> 15:36 </span></span><span class="Apple-style-span" style="font-weight: bold;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">Copyright</span></span></span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">: &copy; 2008 Pohl et al</span></span></span></span></span></span></p>
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<div><span><span><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-weight: bold;">References</span></span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[1] N. Kirstaedter et al., Electron.Lett. 30, 1416 (1994). </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[2] F. Guffarth, R. Heitz, A. Schliwa, O. Stier, N.N. Ledentsov, A. R. Kovsh, V. M. Ustinov, and D.Bimberg, <a href="http://dx.doi.org/10.1103/PhysRevB.64.085305">Phys. Rev. B 64, 085305 (2001)</a>. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[3] R. Sellin, I. Kaiander, D. Ouyang, T. Kettler, U. W. Pohl, D. Bimberg, N. D. Zakharov, P. Werner, <a href="http://dx.doi.org/10.1063/1.1544641">Appl. Phys. Lett. 82, 841 (2003)</a>. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[4] A. Strittmatter, T. D. Germann, Th. Kettler, K. Posilovic, U. W. Pohl, D. Bimberg, <a href="http://dx.doi.org/10.1063/1.2218059">Appl. Phys. Lett. 88, 262104 (2006)</a>. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[5] A. Strittmatter, T. Germann, K. Posilovic, Th. Kettler, U. W. Pohl, D. Bimberg, MRS Fall Meeting, Boston, USA 2006.</span></span></span></span></div>
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<div><span class="Apple-style-span" style="font-weight: bold;font-family:'times new roman';">Citation:</span></div>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">U. W. Pohl, A. Schliwa. I. Kaiander, T. Germann, A. Strittmatter, and D. Dimberg, OAtube Nanotechnology 1, 905 (2008). <span class="Apple-style-span" style="font-size:medium;"><a href="http://www.oanano.org/oatube/$nanotechnology/2008/09/06/uwpohl">http://www.oanano.org/oatube/$nanotechnology/2008/09/06/uwpohl</a></span></span></span></div>]]></description></item><item><title>J.H.Lee</title><link>http://www.oanano.org/oatube/$nanotechnology/2008/09/06/jhlee</link><comments>http://www.oanano.org/oatube/$nanotechnology/2008/09/06/jhlee#Comments</comments><pubDate>2008-09-06T22:54:00Z</pubDate><category>quantum-nanostructures</category><guid isPermaLink="true">http://www.oanano.org/oatube/$nanotechnology/2008/09/06/jhlee</guid><description><![CDATA[<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:large;">Localized Fabrication of Self-Assembled Quantum Structures on photolithographically patterned surfaces with the surface modulation of only 35nm</span></span></div>
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<div><span class="Apple-style-span" style="font-family:'times new roman';">J. H. Lee*, Zh. M. Wang, B. L. Liang, W. T. Black, Vas P. Kunets, Yu I. Mazur, and G. J. Salamo<span class="Apple-style-span" style="font-family:Georgia;"> </span><span class="Apple-style-span" style="font-style: italic;">&nbsp;</span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-style: italic;">Institute of Nanoscale Science and Engineering University of Arkansas, Fayetteville, AR 72701, USA </span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-style: italic;">* Email: jxl14@uark.edu</span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-style: italic;"><br /></span></span></div>
<div><span class="Apple-style-span"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">Semiconductor quantum nanostructures with two and three dimensional confinement have received significant attention due to their unique physical, optical and electronic properties [1-5], which have led to many device applications [6-8]. For some device applications, localized fabrication of quantum structures is of necessary. To realize localization of quantum nanostructures, photolithographically patterned surface can provide a successful route for the nucleation to generate tailored quantum nanostructures and the ensembles of quantum nanostructures. Therefore, the use of nano-scale patterns to guide the formation of nano- and quantum-structures has attracted considerable attentions [9-12]. To date, most investigations to generate ordered arrays of quantum nanostructures have been demonstrated on deeply patterned substrates that are on the order of a few hundred nanometers to microns in depth.</span></span></span></div>
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<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">In this work, we present localized formations of several quantum structures including self-assembled InAs quantum dots (QDs) and GaAs quantum wires on photolithographically nano-patterned GaAs (100) surfaces using molecular-beam epitaxy (MBE). In distinction from the former works [9-12], the presented results were demonstrated on nano-scale shallow patterns of only 35nm, which can potentially provide flexibility on quantum-structures based device fabrication.</span></span></div>
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<div><span class="Apple-style-span" style="font-family:'times new roman';"><a href="http://www.authorstream.com/Presentation/oatube-84721-nanotechnology-1-804-2008-quantum-nanostructures-84717-633555199536406250-science-technology-ppt-powerpoint/">Video Content</a></span><span class="Apple-style-span" style="font-weight: bold;font-family:'times new roman';"> Length<span class="Apple-style-span" style="font-weight: normal;"> 25:23 </span>Copyright<span class="Apple-style-span" style="font-weight: normal;">: &copy; 2008 Lee et al</span> </span></div>
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<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[9]<span class="Apple-style-span" style="white-space: pre;"> </span></span></span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">Tung-Po Hsieh, Pei-Chin Chiu, Yu-Chuan Liu, Nien-Tze Yeh, Wen-Jeng Ho, Jen-Inn Chyi, <a href="http://dx.doi.org/10.1116/1.1856464">J. Vac. Sci. Technol. B, 23(1), 262 (2005)</a>. <span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">&nbsp;</span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></div>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[10]</span></span><span class="Apple-tab-span" style="white-space: pre;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"> </span></span></span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">R. Tsui,  R. Zhang,  K. Shiralagi, and H. Goronkin, <a href="http://dx.doi.org/10.1063/1.120306">Appl. Phys. Lett. 71, 3254 (1997)</a>. <span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">&nbsp;</span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></div>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[11]<span class="Apple-style-span" style="white-space: pre;"> </span></span></span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">A. Konkar, R. Heitz, T. R. Ramachandran, P. Chen,  A.Madhukar,<a href="http://dx.doi.org/10.1116/1.590070"> J. Vac. Sci. Technol. B, 16(3), 1334 (1998)</a>. <span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">&nbsp;</span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></div>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[12] </span></span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">R. V. Kukta, D. Kouris, <a href="http://dx.doi.org/10.1063/1.1848195">J. Appl. Phys. 97, 033527 (2005)</a>.</span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></span></div>
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<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-weight: bold;">Citation</span> </span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">J. H. Lee, Zh. M. Wang, B. L. Liang, W. T. Black, Vas P. Kunets, Yu I. Mazur, and G. J. Salamo, <span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">OAtube Nanotechnology 1, 904 (2008). </span></span><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;"><a target="_blank" href="http://www.oanano.org/oatube/$nanotechnology/2008/09/06/jhlee">http://www.oanano.org/oatube/$nanotechnology/2008/09/06/jhlee</a></span></span></span></span></span></div>]]></description></item><item><title>A.Othonos</title><link>http://www.oanano.org/oatube/$nanotechnology/2008/09/06/aothonos</link><comments>http://www.oanano.org/oatube/$nanotechnology/2008/09/06/aothonos#Comments</comments><pubDate>2008-09-06T21:56:00Z</pubDate><category>nanocharacterization</category><guid isPermaLink="true">http://www.oanano.org/oatube/$nanotechnology/2008/09/06/aothonos</guid><description><![CDATA[<div><span class="Apple-style-span" style="font-size:large;">Surface-related states in oxidized silicon nanocrystals enhance carrier relaxation and inhibit Auger recombination </span></div>
<p><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"> </span></span></span></span></p>
<p><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">Andreas Othonos^1* , Emmanouil Lioudakis^1  A. G. Nassiopoulou^2 </span></span></span></span></p>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-style: italic;">^1 Department of Physics, Research Center of Ultrafast Science, University of Cyprus P.O. Box 20537, 1678, Nicosia, Cyprus </span></span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-style: italic;">^2 IMEL/NCSR Demokritos, Terma Patriarchou Grigoriou, Aghia Paraskevi, 153 10 Athens, Greece </span></span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-style: italic;">*Email: othonos@ucy.ac.cy</span></span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-style: italic;"><br /></span></span></span></span></span></div>
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<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">Silicon is considered as the key material of today&rsquo;s integrated circuit technology; however, one of the major drawbacks of this semiconductor is its inability to efficiently emit light. The observation of efficient photoluminescence a few years ago from porous silicon [1-4] and silicon nanocrystals [5] has provided hope for Si-based optoelectronics and has stirred research interest in the area of Si nanostructures as a potential candidate for silicon based emission devices [6-9]. It is well known that semiconductor nanocrystals (NCs) exhibit interesting size dependent properties, mainly due to the large fraction of surface atoms to the total number of atoms in the NC and quantum size effects that may allow tuning of the light emission peak from such nanostructures. Although there have been different forms of Si nanocrystals manufactured, Si-NCs embedded in a amorphous SiO2 matrix [10, 11] have gained considerable interest due to their PL stability with time for light emission applications and their nanoelectronics applications. Since the demonstration of this type of Si-NCs there has been a significant research interest in their photoluminescence properties, with little emphasis on the ultrafast carrier dynamics [12].</span></span></span></span></div>
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<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"> In this work we have studied femtosecond carrier dynamics in oxidized silicon NCs and the role that surface-related states play to the various relaxation mechanisms over a broad range of photon excitation energy corresponding to energy levels below and above the direct bandgap of the formed NCs [13]. Transient photoinduced absorption techniques [14] have been employed to investigate the effects of surface-related states on the relaxation dynamics of photogenerated carriers in 2.8 nm oxidized silicon NCs. Independent of the excitation photon energy, non-degenerate measurements reveal several distinct relaxation regions corresponding to relaxation of photoexcited carriers from the initial excited states, the lowest indirect states and the surface-related states. Furthermore, degenerate and non-degenerate measurements at difference excitation fluences reveal a linear dependence of the maximum of the photoinduced absorption signal and an identical decay suggesting that Auger recombination does not play a significant role in these nanostructures even for fluence generating up to 20 carriers/NC.</span></span></span></span></div>
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<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="color: #333333; line-height: 16px;font-family:Verdana;"><span class="Apple-style-span" style="font-weight: bold;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-weight: normal;"><a href="http://www.authorstream.com/Presentation/oatube-84723-tead-84282-633553196601875000-science-technology-ppt-powerpoint/">Video Content</a></span> Length</span></span><span class="Apple-style-span" style="font-family:'times new roman';"> 20:00 </span><span class="Apple-style-span" style="font-weight: bold;"><span class="Apple-style-span" style="font-family:'times new roman';">Copyright</span></span><span class="Apple-style-span" style="font-family:'times new roman';">: &copy; 2008 Othonos et al</span></span></span></span></span></span></div>
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<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-weight: bold;">Reference</span> </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[1] L. Canham, <a href="http://dx.doi.org/10.1063/1.103561">Appl. Phys. Lett. 57, 1046 (1990)</a>. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[2] H. Koyama and N. Koshida,  <a href="http://dx.doi.org/10.1063/1.355160">Journal of Applied Physics, 74, 6365 (1993)</a>. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[3]  H. Mizuto, H. Koyama, and N. Koshida, <a href="http://dx.doi.org/10.1063/1.116996">Appl. Phys. Lett., 69, 3779 (1996)</a>. </span></span></span></span></div>
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<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[5]  T. Shimizu-Iwayama, M. Ohshima, T. Niimi, S. Nakao, K. Saitoh, T. Fujita, and N. Itoh, <a href="http://dx.doi.org/10.1088/0953-8984/5/31/002">J. Phys.: Condens. Matter 5, L375 (1993)</a>. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[6]  F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano and P.G. Fallica, <a href="http://dx.doi.org/10.1063/1.1516235">Appl. Phys. Lett. 81 3242 (2002)</a>. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[7]  Y. Kanemitsu, T. Ogawa, K. Shiraishi, and K. Takeda, <a href="http://dx.doi.org/10.1103/PhysRevB.48.4883">Phys. Rev. B 48, 4883 (1993)</a>. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[8]  K. S. Min, K. V. Shcheglov, C. M. Yang, H. A. Atwater, M. L. Brongersma, and A. Polman, <a href="http://dx.doi.org/10.1063/1.116870">Appl. Phys. Lett. 69, 2033 (1996)</a>. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[9]  J. Linnros, N. Lalic, A. Galeckas, and V. Grivickas, <a href="http://dx.doi.org/10.1063/1.371663">J. Appl. Phys. 86, 6128 (1999)</a>. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[10] A. G. Nassiopoulou, Encyclopedia of Nanoscience and Nanotechnology, edited by H. S. Nalwa (American Scientific Publishers, California, 2004), vol. 9 p. 793-813, (2004). </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[11] J  Heitmann, F. Muller, M. Zacharias and U Gosele, <a href="http://dx.doi.org/10.1002/adma.200401126">Advanced Materials 17 (7) 795 (2005)</a>. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[12] E. Lioudakis, A.G. Nassiopoulou, A. Othonos, <a href="http://dx.doi.org/10.1063/1.2728756">Appl. Phys. Lett. 90, 171103 (2007)</a>. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[13] A. Othonos, E. Lioudakis, A.G. Nassiopoulou, accepted for publication in Nanoscale Research Letters. </span></span></span></span></div>
<div><span><span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[14] A. Othonos,  <a href="http://dx.doi.org/10.1063/1.367411">J. Appl. Phys. 83, 1789 (1998)</a>.</span></span></span></span></div>
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<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">A. Othonos, E. Lioudakis, and A. G. Nassiopoulou, <span class="Apple-style-span" style="font-family:Georgia;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">OAtube Nanotechnology 1, 903 (2008).</span></span><a target="_blank" href="http://www.oanano.org/oatube/$nanotechnology/2008/09/06/aothonos"><span class="Apple-style-span" style="color: #000000; text-decoration: none;"><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;"> </span></span></span><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">http://www.oanano.org/oatube/$nanotechnology/2008/09/06/aothonos</span></span></a></span></span></span></div>]]></description></item><item><title>W.Wu</title><link>http://www.oanano.org/oatube/$nanotechnology/2008/09/06/wwu</link><comments>http://www.oanano.org/oatube/$nanotechnology/2008/09/06/wwu#Comments</comments><pubDate>2008-09-06T21:49:00Z</pubDate><category>nanofabrication</category><guid isPermaLink="true">http://www.oanano.org/oatube/$nanotechnology/2008/09/06/wwu</guid><description><![CDATA[<p><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:large;">Fabrication of large area periodic nanostructures using Nanosphere Photolithography</span></span> <span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';"> </span></span></p>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">Wei Wu, Dibyendu Dey, Alex Katsnelson, Omer G. Memis, Hooman Mohseni*</span></span> <span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-style: italic;">&nbsp;</span></span></span></div>
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<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-style: italic;">EECS Department, Northwestern University, Evanston, IL, USA </span></span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-style: italic;">* Email:hmohseni@ece.northwestern.edu</span></span></span></div>
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<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">Large area periodic nanostructures exhibit unique optical and electronic properties and have found many applications, such as photonic band-gap materials [1], high dense data storage [2], and photonic devices [3]. To fabricate these periodic nanostructures, conventional photolithography methods cannot easily reach the resolution required. High-resolution methods such as e-beam lithography and focal ion beam milling are too slow to reach a large area because of their inherent serial property. Nano-imprint methods are fast to be applied, but it needs to use the mold, which requires the same resolutions as the patterns. So, it also benefits from the development of fast, economic and high throughput fabrication methods with a high resolution. We have developed a maskless photolithography method&mdash;Nanosphere Photolithography (NSP)&mdash;to produce a large area of periodic nanopatterns in photoresist utilizing the silica micro-spheres to focus UV light [4][5]. Here we will extend the idea to fabricate large areas of periodic metallic nanostructures using the NSP method. We produced a large area periodic uniform nanohole array perforated in different metallic films, such as gold and aluminum. The diameters of these nanoholes are much smaller than the wavelength of UV light used and they are very uniformly distributed. The method introduced here inherently has both the advantages of photolithography and self-assembled methods. Besides, it also generates very uniform repetitive nanopatterns because the focused beam waist is almost unchanged with different sphere sizes. </span></span></div>
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<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-weight: bold;"><span class="Apple-style-span" style="font-family:'times new roman';">References </span></span></span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[1] S. C. Kitson, W. L. Barnes and J. R. Sambles, <a href="http://dx.doi.org/10.1103/PhysRevLett.77.2670">Phys. Rev. Lett. 77, 2670 (1996)</a>. </span></span></div>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[2] S. M. Weekes, F. Y. Ogrin, and W. A. Murray, <a href="http://dx.doi.org/10.1021/la048695v">Langmuir 20, 11208 (2004)</a>. </span></span></div>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[3] A. G. Brolo, E. Arctander, R. Gordon, B. Leathem and K. L. Kavanagh, <a href="http://dx.doi.org/10.1021/nl048818w">Nano Lett. 4, 2015 (2004)</a> . </span></span></div>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[4] W. Wu, O. G. Memis, A. Katsnelson and H. Mohseni, Nanotechnology, <a href="http://dx.doi.org/10.1088/0957-4484/18/48/485302">18, 485302 (2007)</a>. </span></span></div>
<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">[5] W. Wu, D. Dey, O. G. Memis, A. Katsnelson and H. Mohseni, <a href="http://dx.doi.org/10.1007/s11671-008-9124-6">Nanoscale Res. Lett. 3, 123 (2008)</a>. </span></span></div>
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<div><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-weight: bold;"><span class="Apple-style-span" style="font-family:'times new roman';">Citation</span></span></span><span class="Apple-style-span" style="font-family:'times new roman';"> </span><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">W. Wu, D. Dey, A. Katsnelson, O. G. Memis, and H. Mohseni, OAtube Nanotechnology 1, 902 (2008).</span></span><a target="_blank" href="http://www.oanano.org/oatube/$nanotechnology/2008/09/06/wwu"><span class="Apple-style-span" style="font-size:medium;"><span class="Apple-style-span" style="font-family:'times new roman';">&nbsp;</span><span class="Apple-style-span" style="font-family:'times new roman';">http://www.oanano.org/oatube/$nanotechnology/2008/09/06/wwu</span></span></a></div>
</div>]]></description></item><item><title>J.I.Climente</title><link>http://www.oanano.org/oatube/$nanotechnology/2008/09/06/jiclimente</link><comments>http://www.oanano.org/oatube/$nanotechnology/2008/09/06/jiclimente#Comments</comments><pubDate>2008-09-06T21:45:00Z</pubDate><category>quantum-nanostructures</category><guid isPermaLink="true">http://www.oanano.org/oatube/$nanotechnology/2008/09/06/jiclimente</guid><description><![CDATA[<div><b><span style="font-size: 14px;"><span class="Apple-style-span" style="font-family: 'times new roman';"><span class="Apple-style-span">Antibonding hole ground state in artificial molecules</span></span></span></b></div>
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<div><span style="font-size: 14px;"><span class="Apple-style-span" style="font-family: 'times new roman';">J.I.Climente^1,^2 *, M. Korkusinski^3 , M.F. Doty^4, M. Scheibner^4, A.S. Bracker^4, G. Goldoni^2, D. Gammon^4, and P. Hawrylak^3<span class="Apple-style-span" style="font-family: Georgia;"> </span><span class="Apple-style-span" style="font-style: italic;">&nbsp;</span></span></span></div>
<div><span style="font-size: 14px;"><span class="Apple-style-span" style="font-family: 'times new roman';"><span class="Apple-style-span" style="font-style: italic;">^1Departament de Qu&iacute;mica F&iacute;sica i Anal&iacute;tica, Universitat Jaume I, Castellon, Spain </span></span></span></div>
<div><span style="font-size: 14px;"><span class="Apple-style-span" style="font-family: 'times new roman';"><span class="Apple-style-span" style="font-style: italic;">^2 National Research Center S3, CNR-INFM, Modena, Italy </span></span></span></div>
<div><span style="font-size: 14px;"><span class="Apple-style-span" style="font-family: 'times new roman';"><span class="Apple-style-span" style="font-style: italic;">^3 Institute of Microstructural Sciences, National Research Council, Ottawa, Canada </span></span></span></div>
<div><span style="font-size: 14px;"><span class="Apple-style-span" style="font-family: 'times new roman';"><span class="Apple-style-span" style="font-style: italic;">^4 Naval Research Laboratory, Washington, USA </span></span></span></div>
<div><span style="font-size: 14px;"><span class="Apple-style-span" style="font-family: 'times new roman';"><span class="Apple-style-span" style="font-style: italic;">* Email: climente@unimo.it</span></span></span></div>
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<div><span style="font-size: 14px;"><span class="Apple-style-span" style="font-family: 'times new roman';">Resonant tunneling of carriers between vertically coupled quantum dots enables the formation of hybridized, molecular-like orbitals which are important in many quantum dot-based devices, including those aiming at optically-controlled quantum information storage.[1] The differences in size and composition of quantum dots is overcome by the application of the vertical electric field, which brings the two quantum dot levels into resonance and induces either electron or hole tunneling.[2] The tunneling of electrons is now well understood[1-4], it leads to the formation of bonding molecular ground states in analogy to natural diatomic molecules. However, tunneling of holes does not have a counterpart in diatomic molecules and is less understood. In fact, previous atomistic calculations suggested a reversal of bonding and antibonding hole molecular ground states as the interdot barrier distance increases.[5-7]</span></span></div>
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<div><span style="font-size: 14px;"><span class="Apple-style-span" style="font-family: 'times new roman';">In this work, we present theory and experimental observation of the formation of the antibonding hole molecular ground state. Using a 4-band k&middot;p approximation, the hole states are described as Luttinger spinors[8], which contain all the relevant symmetries. It is shown that the strong spin-orbit interaction in the valence band breaks the parity in the growth direction, mixing bonding and antibonding heavy- and light-hole components of the spinor. This mixing destabilizes (stabilizes) the otherwise pure bonding (antibonding) states, leading to the state reversal. Molecular ground states are then found to have up to ~95% antibonding character. These conclusions are reproduced by numerical, atomistic multi-million-atom calculations using a sp^3d^5s* tight-binding model applied to the realistic self-assembled InGaAs/GaAs double quantum dot structures, including strain, structural asymmetries and vertical electric fields. The results are in qualitative agreement with the k&middot;p theory and predict a bonding-to-antibonding ground state reversal at interdot distances of d&raquo;2 nm. Clear experimental evidence of this peculiar hole behavior is found in magneto-photoluminescence experiments of double dots. The character of the hole molecular orbitals is identified from the electric field dependence of the Zeeman splitting of the neutral exciton when resonant hole tunneling is induced[9]. Comparison of samples with different inter-dot separation shows the bonding-to-antibonding ground state reversal in agreement with theory [10].</span></span></div>
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<div><span class="Apple-style-span" style="font-weight: bold;font-family:'times new roman';">References</span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[1] M. Bayer et al., <a href="http://dx.doi.org/10.1126/science.291.5503.451">Science 291, 451 (2001)</a>. </span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[2] E.A. Stinaff et al., <a href="http://dx.doi.org/10.1126/science.1121189">Science 311, 636 (2006)</a>. </span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[3] A.S. Bracker et al., <a href="http://dx.doi.org/10.1063/1.2400397">Appl. Phys. Lett. 89, 233110 (2006)</a>. </span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[4] H.J. Krenner et al., <a href="http://dx.doi.org/10.1103/PhysRevLett.94.057402">Phys. Rev. Lett. 94, 057402 (2005)</a>; G. Ortner et al. <a href="http://dx.doi.org/10.1103/PhysRevLett.94.157401">ibid 94, 157401 (2005)</a>. </span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[5] W. Jaskolski, <a href="http://przyrbwn.icm.edu.pl/APP/ABSTR/106/a106-2-5.html">Acta Phys.Pol. A 106, 193 (2004)</a>; <a href="http://dx.doi.org/10.1103/PhysRevB.74.195339">Phys. Rev. B 74, 195339 (2006)</a>. </span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[6] G. Bester et al., <a href="http://dx.doi.org/10.1103/PhysRevLett.93.047401">Phys. Rev. Lett. 93, 047401 (2004)</a>; <a href="http://dx.doi.org/10.1103/PhysRevLett.93.047401">Phys. Rev. B 71, 075325 (2005)</a>. </span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[7] M. Korkusinski et al., Proceedings of the 27th Int. Conf. Phys. Semicond., 685 (2005). </span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[8] J.M. Luttinger, and W. Kohn, <a href="http://dx.doi.org/10.1103/PhysRev.97.869">Phys. Rev. 97, 869 (1955)</a>; L.Rego et al . <a href="http://dx.doi.org/10.1103/PhysRevB.55.15694">Phys. Rev. B 55, 15694 (1997)</a>. </span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[9] M.F. Doty et al. <a href="http://dx.doi.org/10.1103/PhysRevLett.97.197202">Phys. Rev. Lett. 97, 197202 (2006)</a><a href="http://dx.doi.org/10.1103/PhysRevLett.97.197202"></a>. </span></span></div>
<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">[10] M. F. Doty et at. <a href="http://arxiv.org/abs/0804.3097v1">ArXiv:0804.3097 (2008)</a>.</span></span></div>
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<div><span class="Apple-style-span" style="font-family:'times new roman';"><span class="Apple-style-span" style="font-size:medium;">J.I. Climente, M. Korkusinski, M.F. Doty, M. Scheibner, A.S. Bracker, G. Goldoni, D. Gammon, and P. Hawrylak, OAtube Nanotechnology 1, 901 (2008).<a href="http://www.oatube.org/2008/09/jiclimente.html"><span class="Apple-style-span" style="text-decoration: none; color: #000000;"> </span></a><a target="_blank" href="http://www.oanano.org/oatube/$nanotechnology/2008/09/06/jiclimente">http://www.oanano.org/oatube/$nanotechnology/2008/09/06/jiclimente</a></span></span></div>
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